CS8N65FA9H mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche en.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
V.
CS8N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 8 45 0.9
performance and enhance the avalanche energy. .
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